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| WTC2307 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.0 AMPERS DRAIN SOUCE VOLTAGE -16 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m @V GS=-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Con tinuous Drain Current 3 (TA=25C) (TA=70C) Pulsed Drain Current 1 Unless Otherwise Specified) Symbol VDS VGS ID I DM Value -16 8 -4.0 -3.3 -12 1.38 90 -55~+150 Unit V A Total Power Dissipation (TA=25C) PD R JA TJ , Tstg W C/W C Maximum (Thermal Resistance) Junction-ambient 3 Operating Junction and Storage Temperature Range 3 Device Marking WTC2307=2307 http:www.weitron.com.tw WEITRON 1/6 16-May-05 WTC2307 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250A Gate-Source Threshold Voltage VDS =VGS ,I D =-250 A Gate-Source Leakage Current VGS = 8 V Drain- Sou rce Leakage Cu rrent(Tj=25C) VDS =-16V,V GS =0 Drain- Sou rce Leakage Cu rrent(Tj=70C) VDS =-12V,V GS =0 Drain-Source On-Resistance 2 VGS =-4.5V,I D=-4.0A VGS =-2.5V,I D=-3.0A Forward Transconductance VDS =-5.0V, ID =-4.0A g fs R DS(o n) 12 60 70 m I DSS -25 V(BR)DSS VGS(Th) I GSS -16 V -1.0 100 -1 A nA S Dynamic Input Capacitance VGS =0V,VDS =-15V,f=1.0MHz Output Capacitance VGS =0V,VDS =-15V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-15V,f=1.0MHz C iss C oss C rss 985 180 160 1580 pF http:www.weitron.com.tw WEITRON 2/6 16-May-05 WTC2307 Switching Turn-on Delay Time 2 VDS=-10V,VGS=-10V,I D=-1A,R D=10 ,R G=3.3 Rise Time VDS=-10V,VGS=-10V,I D=-1A,R D=10 ,R G=3.3 Turn-off De lay Time VDS=-10V,VGS=-10V,I D=-1A,R D=10 ,R G=3.3 Fall Time VDS=-10V,VGS=-10V,I D=-1A,R D=10 ,R G=3.3 Total Gate Charge 2 VDS=-12V,VGS=-4.5V,ID=-4.0A Gate-Source C harge VDS=-12V,VGS=-4.5V,ID=-4.0A Gate-Drain C hange VDS=-12V,VGS=-4.5V,ID=-4.0A t d (on) 8 11 54 36 15 1.3 4 ns t d (off) 24 nC tr tf Qg Q gs Q gd Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V,IS=-1.2A VSD - 39 26 - 1.2 - V ns nC Reverse Recovery Time2 VGS =0V,IS=-4.0A,dl/dt=100A/s Reverse Recovery Charge VGS =0V,IS=-4.0A,dl/dt=100A/s T rr Q rr Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width300s, duty cycle2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270/W when mounted on min, copper pad. http:www.weitron.com.tw WEITRON 3/6 16-May-05 WTC2307 16 14 TA=25C -5.0V -4.5V -3.0V 16 14 T A =150 C -5.0V -4.5V -3.0V -2.5V -I D ,DRAIN CURRENT (A) 10 8 6 4 VG = -1.8V I D ,Drain Current (A) 12 -2.5V 12 10 8 6 4 VG = -1.8V 2 0 0 1 2 3 4 5 6 2 0 0 2 4 6 8 FIG.1 Typical Output Characteristics 70 1.6 -V DS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics V DS ,Drain-to-source Voltage(V) ID = -3A TA = 25C Normalized RDs(on) 60 1.4 ID = -4A VG = -4.5V 1.2 RDS(ON) (m) 1.0 50 0.8 40 1 Fig.3 On-Resistance v.s. Gate Voltage 3 2.0 -VGS ,Gate-to-source Voltage(V) 3 5 7 9 0.6 -50 0 50 100 150 Fig.4 Normalized On-Resistance Tj ,Junction Temperature(C) 2 Tj = 150C Normalized-VGS(th)(V) 1 1.5 Tj = 25C - Is(A) 1 1.0 0.5 0 0 Fig.5 Forward Characteristics of Reverse Diode -VDS ,Source-to-Drain Voltage(V) 0.2 0.4 0.6 0.8 0.0 -50 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) 0 50 100 150 WEITRON http://www.weitron.com.tw 4/6 16-May-05 WTC2307 8 10000 -VGS , Gate to Source Voltage(V) I D = -4A 6 f = 1.0MHz VDS = -16V 4 C(pF) 1000 Ciss 2 Coss Crss 1 5 9 13 17 0 0 8 16 24 32 0 Fig 7. Gate Charge Characteristics 100 Q G , Total Gate Charge(nC) -VDS, Drain-to-Source Voltage(V) Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 10 1ms 1 Normalized Thermal Response(R ja) -I D(A) 10ms 0.1 t T 100ms TA = 25C Single Pulse Is DC 1 10 100 0.01 0.01 Single pulse Duty factor = t / T Peak Tj=PDM x R ja + Ta R ja=270C / W 0.01 0.1 -VDS , Drain-to-Source Voltage(V) 0.001 0.0001 0.001 0.01 t, Pulse Width(s) 0.1 1.0 10 100 1000 Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS 10% QGD VGS td(on) tr td(off) tf Charge Q Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 16-May-05 WTC2307 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 6/6 16-May-05 |
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